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dc.contributor.authorLi, SYen_US
dc.contributor.authorLee, CYen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:41:31Z-
dc.date.available2014-12-08T15:41:31Z-
dc.date.issued2003-01-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0022-0248(02)01918-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/28228-
dc.description.abstractThe ZnO nanowires were synthesized using vapor liquid-solid (VLS) growth process on copper coated p-type Si (100) Substrate. Copper catalyzed the growth of ZnO nanowires of diameters 80-150 nm and lengths of 2.5-4.0 mum. The ZnO nanowires had hexagonal structure and exhibited <0002> orientation. The photoluminescence measurements showed that the ZnO nanowires had a strong ultraviolet emission at around 381 nm and a very weak green emission around 520 nm. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanostructuresen_US
dc.subjectvapor-liquid-solid growthen_US
dc.subjectzinc oxide nanowireen_US
dc.subjectsemiconducting materialsen_US
dc.subjectoptical devicesen_US
dc.titleCopper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid processen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0022-0248(02)01918-8en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume247en_US
dc.citation.issue3-4en_US
dc.citation.spage357en_US
dc.citation.epage362en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180362900015-
dc.citation.woscount198-
Appears in Collections:Articles


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