Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process

Title:	Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
Authors:	Li, SY Lee, CY Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	nanostructures;vapor-liquid-solid growth;zinc oxide nanowire;semiconducting materials;optical devices
Issue Date:	1-Jan-2003
Abstract:	The ZnO nanowires were synthesized using vapor liquid-solid (VLS) growth process on copper coated p-type Si (100) Substrate. Copper catalyzed the growth of ZnO nanowires of diameters 80-150 nm and lengths of 2.5-4.0 mum. The ZnO nanowires had hexagonal structure and exhibited <0002> orientation. The photoluminescence measurements showed that the ZnO nanowires had a strong ultraviolet emission at around 381 nm and a very weak green emission around 520 nm. (C) 2002 Elsevier Science B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/S0022-0248(02)01918-8 http://hdl.handle.net/11536/28228
ISSN:	0022-0248
DOI:	10.1016/S0022-0248(02)01918-8
Journal:	JOURNAL OF CRYSTAL GROWTH
Volume:	247
Issue:	3-4
Begin Page:	357
End Page:	362
Appears in Collections:	Articles

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