標題: Variation of electrical properties of Sro(0.8)Bi(2+x)Ta(2)O(9+delta) ferroelectric thin films with bismuth content
作者: Chou, HY
Tseng, TY
Chen, TM
應用化學系
電子工程學系及電子研究所
Department of Applied Chemistry
Department of Electronics Engineering and Institute of Electronics
關鍵字: ferroelectric;MOD;SBT thin films
公開日期: 2003
摘要: In this work, we have investigated the effect of bismuth content on electrical properties of Sr0.8Bi2+xTa2O9+delta (SBT) thin films, obtained by using the metallorganic decomposition technique. The SBT precursor solution was prepared using high purity strontium acetate, bismuth acetate and tantalum ethoxide as the starting materials and acetic acid as the solvent. Thin films were deposited on Ir(50nm)/SiO2(100Mn)/Si substrates by spin coating with precise control of the solution viscosity and spin speed. As-deposited films were dried at 150degreesC for 10 min followed by pyrolysis at 400degreesC for 30 min in static air to remove the solvent and organic impurities. The films were then post-annealed at 650degreesC for 30 min in ambient oxygen atmosphere. The crystallinity of SBT thin films containing various bismuth levels was characterized by X-ray diffraction (XRD). The 30% Bi excess SBT thin films exhibited preferentially (115) oriented phase. The XRD pattern showed all major peaks corresponding to SBT phase. The microstructure, P-E hysteresis loops and leakage current of SBT films were found to be dependent on the bismuth content.
URI: http://hdl.handle.net/11536/28288
ISBN: 0-87849-924-5
ISSN: 1013-9826
期刊: ADVANCED CERAMICS AND COMPOSITES
Volume: 247
起始頁: 381
結束頁: 384
Appears in Collections:Conferences Paper