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dc.contributor.authorLi, YMen_US
dc.contributor.authorTang, TWen_US
dc.contributor.authorWang, XLen_US
dc.date.accessioned2014-12-08T15:41:42Z-
dc.date.available2014-12-08T15:41:42Z-
dc.date.issued2002-12-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2002.807386en_US
dc.identifier.urihttp://hdl.handle.net/11536/28357-
dc.description.abstractIn this paper, the effectiveness of the effective potential (EP) method for modeling quantum effects in ultrathin oxide MOS structures is investigated. The inversion-layer charge density and MOS capacitance in one-dimensional MOS structures are simulated with various substrate doping profiles and gate bias voltages. The effective mass is used as an adjusting parameter to compare results of the EP model with that of the Schrodinger-Poisson solution. The variation of this optimum parameter for various doping profiles at different gate voltages is investigated. The overestimated average inverse charge depth by the EP method is quantified and its reason explained. The EP model is a good practical simulation tool for modeling quantum effects but more work needs to be done to improve its accuracy near the interface.en_US
dc.language.isoen_USen_US
dc.subjecteffective potentialen_US
dc.subjectmodeling and simulationen_US
dc.subjectMOS devicesen_US
dc.subjectquantum effecten_US
dc.subjectSchrodinger-Poissonen_US
dc.titleModeling of quantum effects for ultrathin oxide MOS structures with an effective potentialen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TNANO.2002.807386en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume1en_US
dc.citation.issue4en_US
dc.citation.spage238en_US
dc.citation.epage242en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000182374000013-
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