Characteristics of deep levels in As-implanted GaN films

標題:	Characteristics of deep levels in As-implanted GaN films
作者:	Lee, L Lee, WC Chung, HM Lee, MC Chen, WH Chen, WK Lee, HY 電子物理學系 Department of Electrophysics
公開日期:	2-九月-2002
摘要:	Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 degreesC thermal annealing for 60 min, one additional deep level located at E-C-0.766 eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature. (C) 2002 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.1499739 http://hdl.handle.net/11536/28526
ISSN:	0003-6951
DOI:	10.1063/1.1499739
期刊:	APPLIED PHYSICS LETTERS
Volume:	81
Issue:	10
起始頁:	1812
結束頁:	1814
顯示於類別：	期刊論文

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