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DC 欄位語言
dc.contributor.authorKer, MDen_US
dc.contributor.authorChen, TYen_US
dc.contributor.authorWu, CYen_US
dc.date.accessioned2014-12-08T15:41:59Z-
dc.date.available2014-12-08T15:41:59Z-
dc.date.issued2002-09-01en_US
dc.identifier.issn0925-1030en_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1020351709833en_US
dc.identifier.urihttp://hdl.handle.net/11536/28544-
dc.description.abstractAn ESD protection design is proposed to solve the ESD protection challenge to the analog pins for high-frequency or current-mode applications. By including an efficient power-rails clamp circuit into the analog I/O pin, the device dimension (W/L) of ESD clamp device connected to the I/O pad in the analog ESD protection circuit can be reduced to only 50/0.5 (mum/mum) in a 0.35-mum silicided CMOS process, but it can sustain the human-body-model (machine-model) ESD level of up to 6 kV (400 V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only similar to1.0 pF (including the bond pad capacitance) for high-frequency applications. A design model to find the optimized layout dimensions and spacings on the input ESD clamp devices has been also developed to keep the total input capacitance almost constant (within 1% variation), even if the analog input signal has a dynamic range of 1 V.en_US
dc.language.isoen_USen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectESD protection circuiten_US
dc.subjectinput capacitanceen_US
dc.subjectanalog pinen_US
dc.titleDesign and analysis of on-chip ESD protection circuit with very low input capacitance for high-precision analog applicationsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1023/A:1020351709833en_US
dc.identifier.journalANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSINGen_US
dc.citation.volume32en_US
dc.citation.issue3en_US
dc.citation.spage257en_US
dc.citation.epage278en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000178096200007-
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