標題: The effect of plating current densities on self-annealing Behaviors of electroplated copper films
作者: Chang, SC
Shieh, JM
Dai, BT
Feng, MS
Li, YH
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Sep-2002
摘要: In this study, the effect of plating current densities on self-annealing behaviors of electroplated Cu films was found to be relevant to the polarization resistance of electroplating systems. Porous films with defects occurred at low plating current density or at low polarization resistance. In contrast, dense films with small grains occurred at higher plating current density or at higher polarization resistance. However, when more current was further supplied, Cu aggregation occurred and deposited films became spongy or dendritic. We suggest that both the defects within porous films and the underlying energy of fine-grained deposits accelerated self-annealing. These two characteristics competed with each other to determine the resistivity drop by self-annealing. On the other hand, the (111) texture evolutions of deposited Cu films with an increase of plating current densities were consistent with the evolutions of resistivity and surface morphology. (C) 2002 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1500348
http://hdl.handle.net/11536/28558
ISSN: 0013-4651
DOI: 10.1149/1.1500348
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 149
Issue: 9
起始頁: G535
結束頁: G538
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