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dc.contributor.authorLIN, HCen_US
dc.contributor.authorLIN, HYen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorWANG, PJen_US
dc.contributor.authorCHAO, CYen_US
dc.date.accessioned2014-12-08T15:04:21Z-
dc.date.available2014-12-08T15:04:21Z-
dc.date.issued1993-09-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.109674en_US
dc.identifier.urihttp://hdl.handle.net/11536/2856-
dc.description.abstractDeposition of undoped polycrystalline-silicon (poly-Si) films on SiO2 using an ultrahigh vacuum chemical vapor deposition system was investigated. Poly-Si films with high crystallinity were obtained at a temperature as low as 525-degrees-C. The layer growth process was found to proceed with an activation energy of 44 +/- 2 kcal/mol, and is dominated by the desorption rate of surface-bonded hydrogen atoms. An incubation time was observed prior to the film deposition. This incubation period increased with decreasing growth temperature, resulting from slower nucleation and growth rates ai lower temperatures.en_US
dc.language.isoen_USen_US
dc.titleGROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.109674en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume63en_US
dc.citation.issue10en_US
dc.citation.spage1351en_US
dc.citation.epage1353en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993LW18300018-
dc.citation.woscount10-
Appears in Collections:Articles