標題: Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
作者: Zakharova, A
Yen, ST
Chao, KA
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Aug-2002
摘要: We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition.
URI: http://dx.doi.org/10.1103/PhysRevB.66.085312
http://hdl.handle.net/11536/28581
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.66.085312
期刊: PHYSICAL REVIEW B
Volume: 66
Issue: 8
起始頁: 0
結束頁: 0
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