標題: FORMATION OF N+P SHALLOW JUNCTION BY AS+ IMPLANTATION THROUGH COSI2 FILM
作者: CHEN, BS
CHEN, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-1993
摘要: Junction formation by As+ ion implantation into CoSi2 and subsequent drive-in annealing was investigated. Diodes with a leakage current density of 0.4 nA/cm2 at 5 V reverse bias can be obtained by a 700-degrees-C/90 min furnace annealing. The performance of junction is mainly determined by the annealing temperature and time as well as the implantation dose. The implantation energy only has a minor effect on junction properties. Based on the experimental results, we define an appropriate process window for this junction formation technique.
URI: http://dx.doi.org/10.1063/1.354497
http://hdl.handle.net/11536/2860
ISSN: 0021-8979
DOI: 10.1063/1.354497
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 74
Issue: 5
起始頁: 3605
結束頁: 3607
Appears in Collections:Articles