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dc.contributor.authorLin, CYen_US
dc.contributor.authorChen, WJen_US
dc.contributor.authorLai, CHen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorLiu, Jen_US
dc.date.accessioned2014-12-08T15:42:07Z-
dc.date.available2014-12-08T15:42:07Z-
dc.date.issued2002-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2002.801288en_US
dc.identifier.urihttp://hdl.handle.net/11536/28616-
dc.description.abstractWe have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.en_US
dc.language.isoen_USen_US
dc.subjectCoen_US
dc.subjectNien_US
dc.subjectSiGeen_US
dc.subjectsilicideen_US
dc.titleFormation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Sien_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2002.801288en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume23en_US
dc.citation.issue8en_US
dc.citation.spage464en_US
dc.citation.epage466en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000177207300007-
dc.citation.woscount20-
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