Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si

doi:10.1109/LED.2002.801288

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DC 欄位	值	語言
dc.contributor.author	Lin, CY	en_US
dc.contributor.author	Chen, WJ	en_US
dc.contributor.author	Lai, CH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Liu, J	en_US
dc.date.accessioned	2014-12-08T15:42:07Z	-
dc.date.available	2014-12-08T15:42:07Z	-
dc.date.issued	2002-08-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2002.801288	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28616	-
dc.description.abstract	We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.	en_US
dc.language.iso	en_US	en_US
dc.subject	Co	en_US
dc.subject	Ni	en_US
dc.subject	SiGe	en_US
dc.subject	silicide	en_US
dc.title	Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2002.801288	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	23	en_US
dc.citation.issue	8	en_US
dc.citation.spage	464	en_US
dc.citation.epage	466	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000177207300007	-
dc.citation.woscount	20	-
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