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dc.contributor.authorTsai, CLen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorWu, LKen_US
dc.date.accessioned2014-12-08T15:42:11Z-
dc.date.available2014-12-08T15:42:11Z-
dc.date.issued2002-07-22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1494839en_US
dc.identifier.urihttp://hdl.handle.net/11536/28658-
dc.description.abstractCarbon nanotips with a high-aspect ratio were directly grown on Pt films. Carbon nanotips grew up to 5.4 mum length and 64 nm diameter under a -120 V bias. Compared to the hollow structure of carbon nanotubes, transmission electron microscopy images indicate its solid body, which is made of graphite. Carbon nanotips possess good field emission characteristics, that is, a turn-on field of 1.5 V/mum and 761 muA/cm(2) under 2.2 V/mum. The Pt films provide a good conduction path for electron transport from the cathode to the emission site and do not act as catalysts. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleBias effect on the growth of carbon nanotips using microwave plasma chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1494839en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume81en_US
dc.citation.issue4en_US
dc.citation.spage721en_US
dc.citation.epage723en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000176871600051-
dc.citation.woscount39-
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