Bias effect on the growth of carbon nanotips using microwave plasma chemical vapor deposition

doi:10.1063/1.1494839

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, CL	en_US
dc.contributor.author	Chen, CF	en_US
dc.contributor.author	Wu, LK	en_US
dc.date.accessioned	2014-12-08T15:42:11Z	-
dc.date.available	2014-12-08T15:42:11Z	-
dc.date.issued	2002-07-22	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1494839	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28658	-
dc.description.abstract	Carbon nanotips with a high-aspect ratio were directly grown on Pt films. Carbon nanotips grew up to 5.4 mum length and 64 nm diameter under a -120 V bias. Compared to the hollow structure of carbon nanotubes, transmission electron microscopy images indicate its solid body, which is made of graphite. Carbon nanotips possess good field emission characteristics, that is, a turn-on field of 1.5 V/mum and 761 muA/cm(2) under 2.2 V/mum. The Pt films provide a good conduction path for electron transport from the cathode to the emission site and do not act as catalysts. (C) 2002 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Bias effect on the growth of carbon nanotips using microwave plasma chemical vapor deposition	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1494839	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	81	en_US
dc.citation.issue	4	en_US
dc.citation.spage	721	en_US
dc.citation.epage	723	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000176871600051	-
dc.citation.woscount	39	-
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