標題: | Poly-Si thin-film transistors crystallized by electron-beam annealing |
作者: | Lin, CY Shih, KH Wu, CC Chin, A 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-七月-2002 |
摘要: | We have investigated an alternative electron-beam crystallization method for poly-Si thin-film transistor application. In contrast to the high crystallization temperature and long duration of conventional furnace crystallization, electron-beam crystallization could be performed at a low thermal budget even without substrate heating. It also provides better device characteristics than conventional furnace annealing, including smaller threshold voltage, higher mobility, smaller subthreshold swing, and larger I-ON/I-OFF ratio. The much smoother surface than the excimer laser annealed sample is also important for further gate oxide integrity and device performance improvement. (C) 2002 The Electrochemical Society. |
URI: | http://dx.doi.org/10.1149/1.1481529 http://hdl.handle.net/11536/28695 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.1481529 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 149 |
Issue: | 7 |
起始頁: | G391 |
結束頁: | G393 |
顯示於類別: | 期刊論文 |