Ultra-shallow junction formation using implantation through capping nitride layer on source/drain extension

Abstract

Method for forming ultra-shallow p(+)/n is demonstrated for 0.15 mum p-type metal-oxide-semiconductor field-effect transistor (pMOSFET). The approach includes a capping ultra-thin nitride on the source/drain extension regions followed by a low energy source/drain (S/D) extension implantation. Ultra shallow p(+)/n junctions can be obtained with depth of 27 nm and sheet resistivity of 1007 Omega/square.