Investigation of Channel Backscattering Characteristics for Nanoscale SOI MOSFETs Using a New Temperature-Dependent Method

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lee, Wei	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:04:22Z	-
dc.date.available	2014-12-08T15:04:22Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-1954-8	en_US
dc.identifier.issn	1078-621X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2874	-
dc.language.iso	en_US	en_US
dc.title	Investigation of Channel Backscattering Characteristics for Nanoscale SOI MOSFETs Using a New Temperature-Dependent Method	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS	en_US
dc.citation.spage	73	en_US
dc.citation.epage	74	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000262065700030	-
Appears in Collections:	Conferences Paper