Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition

Abstract

The properties of deep electron trapping centers of Te-doped (AlxGa1-x)(0.5)In0.5P (x = 0.5) layers grown by metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 +/- 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)(0.5)In0.5P (,v = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)(0.5)In0.5P.