Optimum design for a thermally stable multifinger power transistor

doi:10.1109/16.998601

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liao, CH	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Wang, NL	en_US
dc.contributor.author	Lin, B	en_US
dc.date.accessioned	2014-12-08T15:42:25Z	-
dc.date.available	2014-12-08T15:42:25Z	-
dc.date.issued	2002-05-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.998601	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28803	-
dc.description.abstract	The thermal stability of multifinger bipolar transistors has been analyzed theoretically. Coupled equations are solved to study the onset of instability and its dependence on the distributions of ballasting resistors. Analytical expressions were derived for the emitter ballasting distribution for optimum stable operation. Compared to conventional methods with uniform ballasting, the optimized design can significantly increase the stable operating current of the transistor. An absolutely stable operating condition is also derived. At this condition, the device never becomes unstable.	en_US
dc.language.iso	en_US	en_US
dc.subject	ballasting resistor	en_US
dc.subject	coupling current-voltage (I-V) equations	en_US
dc.subject	heterojunction bipolar transistor (HBT)	en_US
dc.subject	multifinger transistor	en_US
dc.subject	thermal effect	en_US
dc.title	Optimum design for a thermally stable multifinger power transistor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.998601	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	49	en_US
dc.citation.issue	5	en_US
dc.citation.spage	902	en_US
dc.citation.epage	908	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000175235300027	-
dc.citation.woscount	28	-
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