完整后设资料纪录
DC 栏位语言
dc.contributor.authorLu, Ching-Senen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:42:31Z-
dc.date.available2014-12-08T15:42:31Z-
dc.date.issued2008-10-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2008.06.023en_US
dc.identifier.urihttp://hdl.handle.net/11536/28865-
dc.description.abstractAlthough the incorporation of a SiN capping layer could dramatically enhance device performance, the accompanying hydrogen species contained in the capping layer may aggravate hot-carrier reliability. In order to alleviate this shortcoming, we vary the precursor flow conditions and deposition temperature of SiN film during plasma-enhanced chemical vapor deposition (PECVD) and study their impacts on the device performance and reliability. We found that SiN film with higher nitrogen content depicts larger tensile stress and therefore better mobility. More importantly, the resistance to hot-carrier degradation is also improved by increasing N-2 gas flow rate and deposition temperature because of less hydrogen diffusion from the capping layer. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSiN cappingen_US
dc.subjectTensile stressen_US
dc.subjectPrecursor flow conditionsen_US
dc.subjectHot-carrier stressen_US
dc.titleImpacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.sse.2008.06.023en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume52en_US
dc.citation.issue10en_US
dc.citation.spage1584en_US
dc.citation.epage1588en_US
dc.contributor.department电子工程学系及电子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260755900020-
显示于类别:Conferences Paper


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