完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | Lu, Ching-Sen | en_US |
dc.contributor.author | Lin, Horng-Chih | en_US |
dc.contributor.author | Huang, Tiao-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:42:31Z | - |
dc.date.available | 2014-12-08T15:42:31Z | - |
dc.date.issued | 2008-10-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2008.06.023 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28865 | - |
dc.description.abstract | Although the incorporation of a SiN capping layer could dramatically enhance device performance, the accompanying hydrogen species contained in the capping layer may aggravate hot-carrier reliability. In order to alleviate this shortcoming, we vary the precursor flow conditions and deposition temperature of SiN film during plasma-enhanced chemical vapor deposition (PECVD) and study their impacts on the device performance and reliability. We found that SiN film with higher nitrogen content depicts larger tensile stress and therefore better mobility. More importantly, the resistance to hot-carrier degradation is also improved by increasing N-2 gas flow rate and deposition temperature because of less hydrogen diffusion from the capping layer. (C) 2008 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SiN capping | en_US |
dc.subject | Tensile stress | en_US |
dc.subject | Precursor flow conditions | en_US |
dc.subject | Hot-carrier stress | en_US |
dc.title | Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.sse.2008.06.023 | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 52 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 1584 | en_US |
dc.citation.epage | 1588 | en_US |
dc.contributor.department | 电子工程学系及电子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000260755900020 | - |
显示于类别: | Conferences Paper |
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