標題: | Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors |
作者: | Lu, Ching-Sen Lin, Horng-Chih Huang, Jian-Ming Lu, Chia-Yu Lee, Yao-Jen Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | SiN capping;tensile strain;hot-carrier stress (HCS);lateral distribution of interface state;charge pumping |
公開日期: | 1-四月-2007 |
摘要: | The characteristics of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a SiN capping layer were investigated in this study. Although the incorporation of the SiN capping layer markedly enhanced the carrier mobility and thus the drive current of the fabricated devices, the resistance to hot-carrier degradation was sacrificed, owing to the high content of hydrogen in the SiN layer that might diffuse to the channel region during the process. Even if the SiN layer was removed and the channel strain was released later, the hot-carrier degradation was severer than that in devices without SiN capping. Finally, the lateral distribution of generated interface states due to hot-carrier stress was also investigated in this study. |
URI: | http://dx.doi.org/10.1143/JJAP.46.2027 http://hdl.handle.net/11536/4959 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.46.2027 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 46 |
Issue: | 4B |
起始頁: | 2027 |
結束頁: | 2031 |
顯示於類別: | 會議論文 |