標題: Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors
作者: Lu, Ching-Sen
Lin, Horng-Chih
Huang, Jian-Ming
Lu, Chia-Yu
Lee, Yao-Jen
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiN capping;tensile strain;hot-carrier stress (HCS);lateral distribution of interface state;charge pumping
公開日期: 1-四月-2007
摘要: The characteristics of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a SiN capping layer were investigated in this study. Although the incorporation of the SiN capping layer markedly enhanced the carrier mobility and thus the drive current of the fabricated devices, the resistance to hot-carrier degradation was sacrificed, owing to the high content of hydrogen in the SiN layer that might diffuse to the channel region during the process. Even if the SiN layer was removed and the channel strain was released later, the hot-carrier degradation was severer than that in devices without SiN capping. Finally, the lateral distribution of generated interface states due to hot-carrier stress was also investigated in this study.
URI: http://dx.doi.org/10.1143/JJAP.46.2027
http://hdl.handle.net/11536/4959
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.2027
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 4B
起始頁: 2027
結束頁: 2031
顯示於類別:會議論文


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