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dc.contributor.authorKAO, YHen_US
dc.contributor.authorLIN, HTen_US
dc.date.accessioned2019-04-03T06:37:21Z-
dc.date.available2019-04-03T06:37:21Z-
dc.date.issued1993-09-01en_US
dc.identifier.issn2469-9926en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevA.48.2292en_US
dc.identifier.urihttp://hdl.handle.net/11536/2886-
dc.description.abstractIn this paper the inherent properties of period-doubling behavior in deeply modulated laser diodes were investigated. The thresholds for the period doubling in terms of the controlling parameters were indicated. With the consideration of Langevin noise in the single-mode rate equations, it was indicated that the noise acted as a virtual Hopf precursor for the event of period doubling. The linewidth and frequency shifting of the noise bump were predicted by Floquet multipliers. Finally, a comparison of the noise bumps obtained from the simulated and analytic methods was also presented.en_US
dc.language.isoen_USen_US
dc.titlePERSISTENT PROPERTIES OF PERIOD-DOUBLING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERSen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevA.48.2292en_US
dc.identifier.journalPHYSICAL REVIEW Aen_US
dc.citation.volume48en_US
dc.citation.issue3en_US
dc.citation.spage2292en_US
dc.citation.epage2298en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:A1993LX85600073en_US
dc.citation.woscount16en_US
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