標題: | Evaluation of modulating field of photoreflectance of surface-intrinsic-n(+) type doped GaAs by using photoinduced voltage |
作者: | Lee, WY Chien, JY Wang, DP Huang, KF Huang, TC 電子物理學系 Department of Electrophysics |
公開日期: | 1-四月-2002 |
摘要: | Photoreflectance (PR) of surface-intrinsic-n(+) type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field F-bi. In the previous work we have obtained the relation Fapproximate toF(bi)-deltaF/2 when deltaF<F-bi by using electroreflectance to simulate PR, where deltaF is the modulating field of the pump beam. In this work a method was devised to evaluate deltaF by using photoinduced voltages V-s and, hence, the relation can be verified by PR itself. The deltaFs obtained by V-s are also consistent with those of using imaginary part of fast Fourier transform of PR spectra. (C) 2002 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1453492 http://hdl.handle.net/11536/28874 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.1453492 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 91 |
Issue: | 7 |
起始頁: | 4101 |
結束頁: | 4104 |
顯示於類別: | 期刊論文 |