標題: Comparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorber
作者: Chen, YF
Lan, YP
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 1-四月-2002
摘要: Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.
URI: http://dx.doi.org/10.1007/s003400200814
http://hdl.handle.net/11536/28879
ISSN: 0946-2171
DOI: 10.1007/s003400200814
期刊: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 74
Issue: 4-5
起始頁: 415
結束頁: 418
顯示於類別:期刊論文


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