標題: | Comparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorber |
作者: | Chen, YF Lan, YP 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
公開日期: | 1-Apr-2002 |
摘要: | Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers. |
URI: | http://dx.doi.org/10.1007/s003400200814 http://hdl.handle.net/11536/28879 |
ISSN: | 0946-2171 |
DOI: | 10.1007/s003400200814 |
期刊: | APPLIED PHYSICS B-LASERS AND OPTICS |
Volume: | 74 |
Issue: | 4-5 |
起始頁: | 415 |
結束頁: | 418 |
Appears in Collections: | Articles |
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