Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range

標題:	Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
作者:	Chen, SB Lai, CH Chan, KT Chin, A Hsieh, JC Liu, J 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	dielectric constant;frequency dependence;high k;loss tangent;RF
公開日期:	1-四月-2002
摘要:	We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
URI:	http://dx.doi.org/10.1109/55.992839 http://hdl.handle.net/11536/28901
ISSN:	0741-3106
DOI:	10.1109/55.992839
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	23
Issue:	4
起始頁:	203
結束頁:	205
顯示於類別：	期刊論文

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