標題: A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY
作者: CHOU, JW
CHANG, CY
HO, LT
KO, J
HSUE, P
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: DRAIN ENGINEERING;LIGHTLY DOPED DRAIN (LDD);OBLIQUE IMPLANTATION;SURFACE COUNTER DOPED LDD (SCD-LDD);HOT CARRIER RELIABILITY
公開日期: 1-Sep-1993
摘要: A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.
URI: http://hdl.handle.net/11536/2891
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 32
Issue: 9A
起始頁: L1203
結束頁: L1205
Appears in Collections:Articles