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dc.contributor.authorLin, JJen_US
dc.contributor.authorZhong, YLen_US
dc.contributor.authorLi, TJen_US
dc.date.accessioned2014-12-08T15:42:39Z-
dc.date.available2014-12-08T15:42:39Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://dx.doi.org/10.1209/epl/i2002-00591-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/28950-
dc.description.abstractWe have studied the effect of thermal annealing on electron dephasing times in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using the weak-localization method. In all samples, we find that possesses an extremely weak temperature dependence as T --> 0. Our results show that the effect of annealing is non-universal, and it depends strongly on the amount of disorder quenched in the microstructures during deposition. The observed saturation behavior of cannot be easily explained by magnetic scattering. We suggest that the issue of saturation can be better addressed in three-dimensional, rather than lower-dimensional, structures.en_US
dc.language.isoen_USen_US
dc.titleEffect of annealing on electron dephasing in three-dimensional polycrystalline metalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1209/epl/i2002-00591-8en_US
dc.identifier.journalEUROPHYSICS LETTERSen_US
dc.citation.volume57en_US
dc.citation.issue6en_US
dc.citation.spage872en_US
dc.citation.epage878en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000174448700015-
dc.citation.woscount13-
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