標題: | A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT |
作者: | Lin, CW Tseng, CH Chang, TK Lin, CW Wang, WT Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | excimer laser;poly-Si thin film transistor;self-aligned gate-overlapped LDD |
公開日期: | 1-三月-2002 |
摘要: | A novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser Irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dapants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature process. |
URI: | http://dx.doi.org/10.1109/55.988815 http://hdl.handle.net/11536/28968 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.988815 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 23 |
Issue: | 3 |
起始頁: | 133 |
結束頁: | 135 |
顯示於類別: | 期刊論文 |