標題: Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures
作者: Lu, CR
Lee, JR
Chen, YY
Lee, WI
Lee, SC
電子物理學系
Department of Electrophysics
關鍵字: GaNAs/GaAs;photoreflectance;quantum wells
公開日期: 2002
摘要: We investigate GaNAs/GaAs multiple quantum well structures using the photoreflectance spectroscopy at various temperatures. The modulated optical response consists of quantum well excitonic transitions and band edge transitions that exhibits Franz-Keldysh oscillatory features. The bowing parameter, effective mass, and the band-offset value were adjusted to obtain the subband energies to best fit the observed quantum well transition energies. The period of the Franz-Keldysh oscillations indicates the strength of the internal field.
URI: http://hdl.handle.net/11536/29158
ISBN: 0-87849-894-X
ISSN: 0255-5476
期刊: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS
Volume: 389-3
起始頁: 1497
結束頁: 1500
Appears in Collections:Conferences Paper