Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, JH | en_US |
dc.contributor.author | Lei, TF | en_US |
dc.contributor.author | Chen, CL | en_US |
dc.contributor.author | Chao, TS | en_US |
dc.contributor.author | Wen, WY | en_US |
dc.contributor.author | Chen, KT | en_US |
dc.date.accessioned | 2014-12-08T15:43:07Z | - |
dc.date.available | 2014-12-08T15:43:07Z | - |
dc.date.issued | 2002-01-01 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.1421607 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29177 | - |
dc.description.abstract | This work describes a high performance and reliable deep submicrometer n-channel metal oxide semiconductor field effect transistor (n-MOSFET) with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. The results herein reveal that the performance and reliability, including the leakage current of the ultrathin gate oxide, charge-to-breakdown, drain current, transconductance, charge pumping current, stress induced leakage current, and hot carrier reliability of n-MOSFETs are all significantly improved. The enhanced reliability and performance are attributed to the native-oxide-free process, smooth interface, and reduced incorporation of As in the gate oxide which results from HF vapor cleaning and nitrogen implantation. (C) 2001 The Electrochemical Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.1421607 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 149 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | G63 | en_US |
dc.citation.epage | G69 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000172938900047 | - |
dc.citation.woscount | 3 | - |
Appears in Collections: | Articles |
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