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dc.contributor.authorSung, WJen_US
dc.contributor.authorLiu, TYen_US
dc.contributor.authorYang, SLen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorChou, FIen_US
dc.contributor.authorWei, YYen_US
dc.date.accessioned2014-12-08T15:43:11Z-
dc.date.available2014-12-08T15:43:11Z-
dc.date.issued2001-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/29232-
dc.description.abstractDeep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.en_US
dc.language.isoen_USen_US
dc.subjectGaInPen_US
dc.subjectgamma-rayen_US
dc.subjectirradiationen_US
dc.subjectdefecten_US
dc.subjecttrapen_US
dc.subjectdeep levelen_US
dc.subjectDLTSen_US
dc.titleDeep hole traps created by gamma-ray irradiation of GaInPen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume40en_US
dc.citation.issue12en_US
dc.citation.spage6807en_US
dc.citation.epage6808en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000175190700025-
dc.citation.woscount1-
Appears in Collections:Articles


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