Deep hole traps created by gamma-ray irradiation of GaInP

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DC 欄位	值	語言
dc.contributor.author	Sung, WJ	en_US
dc.contributor.author	Liu, TY	en_US
dc.contributor.author	Yang, SL	en_US
dc.contributor.author	Huang, KF	en_US
dc.contributor.author	Tseng, TY	en_US
dc.contributor.author	Chou, FI	en_US
dc.contributor.author	Wei, YY	en_US
dc.date.accessioned	2014-12-08T15:43:11Z	-
dc.date.available	2014-12-08T15:43:11Z	-
dc.date.issued	2001-12-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29232	-
dc.description.abstract	Deep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaInP	en_US
dc.subject	gamma-ray	en_US
dc.subject	irradiation	en_US
dc.subject	defect	en_US
dc.subject	trap	en_US
dc.subject	deep level	en_US
dc.subject	DLTS	en_US
dc.title	Deep hole traps created by gamma-ray irradiation of GaInP	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	40	en_US
dc.citation.issue	12	en_US
dc.citation.spage	6807	en_US
dc.citation.epage	6808	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000175190700025	-
dc.citation.woscount	1	-
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