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dc.contributor.authorChen, KJen_US
dc.contributor.authorHong, WKen_US
dc.contributor.authorLin, CPen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:43:17Z-
dc.date.available2014-12-08T15:43:17Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.962648en_US
dc.identifier.urihttp://hdl.handle.net/11536/29295-
dc.description.abstractA low turn-on voltage, field emission triode array has been fabricated using the selective deposition of carbon nanotubes (CNTs) in a microwave plasma chemical vapor deposition (MPCVD) system. The field emission triodes exhibited a low turn-on voltage of 13 V and a large emission current of 23 muA with the gate voltage at 60 V. Short-term stress reveals a 10% current fluctuation within 1800 sec. The excellent electric properties suggest that the array shows potential for application in field emission displays and vacuum microelectronics.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubesen_US
dc.subjectfield emission displayen_US
dc.subjectfield emission triodeen_US
dc.titleLow turn-on voltage field emission triodes with selective growth of carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.962648en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue11en_US
dc.citation.spage516en_US
dc.citation.epage518en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171933100006-
dc.citation.woscount28-
Appears in Collections:Articles


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