Low turn-on voltage field emission triodes with selective growth of carbon nanotubes

doi:10.1109/55.962648

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, KJ	en_US
dc.contributor.author	Hong, WK	en_US
dc.contributor.author	Lin, CP	en_US
dc.contributor.author	Chen, KH	en_US
dc.contributor.author	Chen, LC	en_US
dc.contributor.author	Cheng, HC	en_US
dc.date.accessioned	2014-12-08T15:43:17Z	-
dc.date.available	2014-12-08T15:43:17Z	-
dc.date.issued	2001-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.962648	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29295	-
dc.description.abstract	A low turn-on voltage, field emission triode array has been fabricated using the selective deposition of carbon nanotubes (CNTs) in a microwave plasma chemical vapor deposition (MPCVD) system. The field emission triodes exhibited a low turn-on voltage of 13 V and a large emission current of 23 muA with the gate voltage at 60 V. Short-term stress reveals a 10% current fluctuation within 1800 sec. The excellent electric properties suggest that the array shows potential for application in field emission displays and vacuum microelectronics.	en_US
dc.language.iso	en_US	en_US
dc.subject	carbon nanotubes	en_US
dc.subject	field emission display	en_US
dc.subject	field emission triode	en_US
dc.title	Low turn-on voltage field emission triodes with selective growth of carbon nanotubes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.962648	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	11	en_US
dc.citation.spage	516	en_US
dc.citation.epage	518	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000171933100006	-
dc.citation.woscount	28	-
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