完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Chi-Min | en_US |
dc.contributor.author | Chao, Mango C. -T. | en_US |
dc.contributor.author | Huang, Rei-Fu | en_US |
dc.contributor.author | Chen, Ding-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:04:25Z | - |
dc.date.available | 2014-12-08T15:04:25Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.isbn | 978-1-4244-2402-3 | en_US |
dc.identifier.issn | 1089-3539 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2930 | - |
dc.description.abstract | The embedded-DRAM testing mixes up the techniques used for DRAM testing and SRAM testing since an embedded-DRAM core combines DRAM cells with an SRAM interface (the so-called IT-SRAM architecture). In this paper we first present our test algorithm for embedded-DRAM testing. A theoretical analysis to the leakage mechanisms of a switch transistor is also provided, based on that we can test the embedded-DRAM at a higher temperature to reduce the total test time and maintain the same retention-fault coverage. The experimental results art? collected based on I-lot wafers with an 16Mb embedded DRAM core. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Testing Methodology of Embedded DRAMs | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2008 IEEE INTERNATIONAL TEST CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | en_US |
dc.citation.spage | 647 | en_US |
dc.citation.epage | 655 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000267525900071 | - |
顯示於類別: | 會議論文 |