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dc.contributor.authorChang, Chi-Minen_US
dc.contributor.authorChao, Mango C. -T.en_US
dc.contributor.authorHuang, Rei-Fuen_US
dc.contributor.authorChen, Ding-Yuanen_US
dc.date.accessioned2014-12-08T15:04:25Z-
dc.date.available2014-12-08T15:04:25Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2402-3en_US
dc.identifier.issn1089-3539en_US
dc.identifier.urihttp://hdl.handle.net/11536/2930-
dc.description.abstractThe embedded-DRAM testing mixes up the techniques used for DRAM testing and SRAM testing since an embedded-DRAM core combines DRAM cells with an SRAM interface (the so-called IT-SRAM architecture). In this paper we first present our test algorithm for embedded-DRAM testing. A theoretical analysis to the leakage mechanisms of a switch transistor is also provided, based on that we can test the embedded-DRAM at a higher temperature to reduce the total test time and maintain the same retention-fault coverage. The experimental results art? collected based on I-lot wafers with an 16Mb embedded DRAM core.en_US
dc.language.isoen_USen_US
dc.titleTesting Methodology of Embedded DRAMsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 IEEE INTERNATIONAL TEST CONFERENCE, VOLS 1 AND 2, PROCEEDINGSen_US
dc.citation.spage647en_US
dc.citation.epage655en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000267525900071-
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