Diamond nucleation on Cu by using MPCVD with a biasing pretreatment

Abstract

Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved.