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dc.contributor.authorTseng, CHen_US
dc.contributor.authorLin, CWen_US
dc.contributor.authorChang, TKen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:43:19Z-
dc.date.available2014-12-08T15:43:19Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1405997en_US
dc.identifier.urihttp://hdl.handle.net/11536/29323-
dc.description.abstractExcimer laser annealing has been utilized to manufacture low temperature polycrystalline silicon thin-film transistors with lightly doped drain (LDD) structures. The excimer laser annealing can effectively reduce the thermal budget of source/drain dopant activation, namely, without substrate heating. With the advantages of LDD structure, high performance device characteristics with a low "off" state current of 4.38 x 10(-12) A/mum, high on/off current ratio of 1.6 x 10(7). and good field-effect mobility of 268 cm(2)/V s. can be achieved simultaneously. (C) 2001 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEffects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drainsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1405997en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume4en_US
dc.citation.issue11en_US
dc.citation.spageG94en_US
dc.citation.epageG97en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171501700014-
dc.citation.woscount7-
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