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dc.contributor.authorSu, CYen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorChen, LPen_US
dc.contributor.authorHo, YPen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorLin, DCen_US
dc.contributor.authorTseng, BMen_US
dc.contributor.authorLee, HYen_US
dc.contributor.authorKuan, JFen_US
dc.contributor.authorDeng, YMen_US
dc.contributor.authorWen, KAen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:43:21Z-
dc.date.available2014-12-08T15:43:21Z-
dc.date.issued2001-10-01en_US
dc.identifier.issn0192-6225en_US
dc.identifier.urihttp://hdl.handle.net/11536/29351-
dc.description.abstractThe parameter extraction language (PEL) in Agilent IC-CAP software is used to develop an automatic macro program for the analysis of the characteristics of RF MOSFETs. By using this powerful macro program, the time spent on the measurement of the MOSFET characteristics and the related analysis is effectively reduced. This macro program permits a fast and accurate method to obtain the DC and RF characteristics of MOSFETs with different device geometries and operating conditions. It is also suitable for high volume measurements and analyses of MOSFET, and provides a solid jou 71 dation for RF circuit design.en_US
dc.language.isoen_USen_US
dc.titleAn automatic macro program for radio frequency MOSFET characteristics analysisen_US
dc.typeArticleen_US
dc.identifier.journalMICROWAVE JOURNALen_US
dc.citation.volume44en_US
dc.citation.issue10en_US
dc.citation.spage98en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171683700018-
dc.citation.woscount0-
顯示於類別：期刊論文


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