CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES

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DC Field	Value	Language
dc.contributor.author	TAI, K	en_US
dc.contributor.author	HUANG, KF	en_US
dc.contributor.author	WU, CC	en_US
dc.contributor.author	WYNN, JD	en_US
dc.date.accessioned	2014-12-08T15:04:26Z	-
dc.date.available	2014-12-08T15:04:26Z	-
dc.date.issued	1993-07-22	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2935	-
dc.description.abstract	Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.	en_US
dc.language.iso	en_US	en_US
dc.title	CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	15	en_US
dc.citation.spage	1314	en_US
dc.citation.epage	1316	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1993ME78300068	-
dc.citation.woscount	0	-
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