ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE

doi:10.1063/1.109738

標題:	ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
作者:	WU, SL LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	5-Jul-1993
摘要:	This letter reports a stacked nitride/microcrystalline-silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room-temperature resonant tunneling effect is also observed for this structure.
URI:	http://dx.doi.org/10.1063/1.109738 http://hdl.handle.net/11536/2938
ISSN:	0003-6951
DOI:	10.1063/1.109738
期刊:	APPLIED PHYSICS LETTERS
Volume:	63
Issue:	1
起始頁:	24
結束頁:	26
Appears in Collections:	Articles