標題: QUANTUM CONFINEMENT EFFECTS ON LOW-DIMENSIONAL ELECTRON-MOBILITY
作者: WANG, TH
HSIEH, TH
CHEN, TW
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1993
摘要: A study of quantum confinement effects on the low-dimensional electron mobility in various AlGaAs/GaAs quantum well/wire structures has been performed. The influence of the electron envelop wave function and the subband structure on the low-dimensional electron scattering rates is evaluated. The electron transport behavior is studied through a Monte Carlo simulation. The result shows that the low-dimensional electron mobility varies significantly with the quantum well/wire geometry. The one-dimensional electron mobility of 9200 cm2/V s is obtained in a rectangular quantum wire with a geometry of 110 angstrom X 110 angstrom. This value is much improved in comparison with the bulk electron mobility of 8000 cm2/V s in intrinsic GaAs and the maximum two-dimensional electron mobility of 8600 cm2/V s in a 120 angstrom GaAs quantum well. It is also noticed that the highest low-dimensional electron mobility is achieved in a quantum well/wire structure where the energy separation between the first subband and the second subband is about two polar optical phonon energy.
URI: http://dx.doi.org/10.1063/1.354127
http://hdl.handle.net/11536/2940
ISSN: 0021-8979
DOI: 10.1063/1.354127
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 74
Issue: 1
起始頁: 426
結束頁: 430
顯示於類別:期刊論文