標題: | QUANTUM CONFINEMENT EFFECTS ON LOW-DIMENSIONAL ELECTRON-MOBILITY |
作者: | WANG, TH HSIEH, TH CHEN, TW 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-七月-1993 |
摘要: | A study of quantum confinement effects on the low-dimensional electron mobility in various AlGaAs/GaAs quantum well/wire structures has been performed. The influence of the electron envelop wave function and the subband structure on the low-dimensional electron scattering rates is evaluated. The electron transport behavior is studied through a Monte Carlo simulation. The result shows that the low-dimensional electron mobility varies significantly with the quantum well/wire geometry. The one-dimensional electron mobility of 9200 cm2/V s is obtained in a rectangular quantum wire with a geometry of 110 angstrom X 110 angstrom. This value is much improved in comparison with the bulk electron mobility of 8000 cm2/V s in intrinsic GaAs and the maximum two-dimensional electron mobility of 8600 cm2/V s in a 120 angstrom GaAs quantum well. It is also noticed that the highest low-dimensional electron mobility is achieved in a quantum well/wire structure where the energy separation between the first subband and the second subband is about two polar optical phonon energy. |
URI: | http://dx.doi.org/10.1063/1.354127 http://hdl.handle.net/11536/2940 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.354127 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 74 |
Issue: | 1 |
起始頁: | 426 |
結束頁: | 430 |
顯示於類別: | 期刊論文 |