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dc.contributor.authorChen, CMen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorChou, JWen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2014-12-08T15:43:30Z-
dc.date.available2014-12-08T15:43:30Z-
dc.date.issued2001-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.40.5257en_US
dc.identifier.urihttp://hdl.handle.net/11536/29437-
dc.description.abstractExcellent p-type metal oxide semiconductor (PMOS) short channel effect is achieved by using a high-energy, large tilt angle arsenic implant as a P-channel halo. For the first time, it was found that the dopant profile of Halo was implanted through the poly-silicon gate. The channel concentration is modulated not only laterally from the gate edge but also vertically from the top of the polysilicon gate and this resulted in very flat short channel behavior. The effect of the arsenic halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate-oxide integrity was examined by charge to break down (Q(BD)). Excellent performance of 0.12 mum PMOSFET is also demonstrated in this work.en_US
dc.language.isoen_USen_US
dc.subjectMOS devicesen_US
dc.subjectarsenicen_US
dc.subjecthaloen_US
dc.subjectshort channel effecten_US
dc.titleOptimization of short channel effect with arsenic halo implant through polysilicon gateen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.40.5257en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume40en_US
dc.citation.issue9Aen_US
dc.citation.spage5257en_US
dc.citation.epage5261en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171677200012-
dc.citation.woscount0-
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