Optimization of short channel effect with arsenic halo implant through polysilicon gate

Abstract

Excellent p-type metal oxide semiconductor (PMOS) short channel effect is achieved by using a high-energy, large tilt angle arsenic implant as a P-channel halo. For the first time, it was found that the dopant profile of Halo was implanted through the poly-silicon gate. The channel concentration is modulated not only laterally from the gate edge but also vertically from the top of the polysilicon gate and this resulted in very flat short channel behavior. The effect of the arsenic halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate-oxide integrity was examined by charge to break down (Q(BD)). Excellent performance of 0.12 mum PMOSFET is also demonstrated in this work.