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dc.contributor.authorLee, JYen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:43:34Z-
dc.date.available2014-12-08T15:43:34Z-
dc.date.issued2001-08-10en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0039-6028(01)01087-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/29457-
dc.description.abstractThe homoepitaxial growth of SrTiO3 (STO) films on as-polished STO(1 0 0) substrates by pulsed laser deposition has been exploited in detail. The intimate correlation between the surface step edge density and reflection high-energy electron diffraction (RHEED) intensity is clearly demonstrated by measuring the relation between the initial RHEED intensity drop and laser repetition rates. Systematic in situ annealing schemes were performed to investigate the film growth mechanisms. The results indicate that the two or three level growth May have occurred during some annealing schemes and can be interpreted by Stoyanov's step edge density model. Complementary atomic force microscopy investigations of the film surfaces further tend direct support to the RHEED intensity observations. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectepitaxyen_US
dc.subjectgrowthen_US
dc.subjectreflection high-energy electron diffraction (RHEED)en_US
dc.subjectatomic force microscopyen_US
dc.titleAnnealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0039-6028(01)01087-1en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume488en_US
dc.citation.issue3en_US
dc.citation.spage277en_US
dc.citation.epage285en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000170568800004-
dc.citation.woscount13-
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