完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLee, CHen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorHuang, CFen_US
dc.contributor.authorHuang, MYen_US
dc.contributor.authorLin, HHen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:43:35Z-
dc.date.available2014-12-08T15:43:35Z-
dc.date.issued2001-08-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/29468-
dc.description.abstractThe properties of D- ions in quantum wells were studied. It is found that, with an intermediate concentration of D- ions, electrons in the quantum wells possess both band-like and impurity-like properties. The appearance of the Quantum Hall effect makes it possible to rule out the existence of an impurity band that is separated from the conduction band. The results are interpreted in terms of the formation of a D- conduction band, with the D- band becoming a tail of the conduction band. The implications of our experimental results on the metal-insulator transitions in doped semiconductors are discussed.en_US
dc.language.isoen_USen_US
dc.titleTransport and optical studies of the D--conduction band in doped GaAs/AlGaAs quantum wellsen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume39en_US
dc.citation.issue4en_US
dc.citation.spage363en_US
dc.citation.epage368en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000170631000011-
dc.citation.woscount2-
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