Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides

Abstract

This work compares the physical and electrical properties of two species of inorganic low dielectric constant (low-k) chemical vapor deposited (CVD) oxides, F-doped fluorinated silicate glass (FSG, k = 3.5) and C-doped organosilicate glass (OSG, k = 2.9). Experimental results indicate that FSG has a higher thermal stability >600 degreesC! than OSG (500 degreesC), based on the results of thermal annealing for 30 min in an N-2 ambient. The degradation of the low-k property in OSG is mainly due to the thermal decomposition of methyl (-CH3) groups at temperatures above 500 degreesC. For the Cu gated oxide-sandwiched low-k dielectric metal-insulator-semiconductor (MIS) capacitors, Cu penetration was observed in both FSG and OSG after the MIS capacitors were bias-temperature stressed at 250 and 150 degreesC, respectively, with an effective applied field of 0.8 MV/cm. Specifically, Cu appeared to drift more readily in OSG than in FSG, presumably because OSG has a more porous and less dense structure than FSG. The Cu permeation can be impeded by a thin nitride (SiN) barrier layer. (C) 2001 The Electrochemical Society.