標題: | Thermal uniformity of 12-in silicon wafer in linearly ramped-temperature transient rapid thermal processing |
作者: | Lin, S Chu, HS 機械工程學系 Department of Mechanical Engineering |
關鍵字: | inverse heat-transfer method;linear ramp-up rate;rapid thermal processing;thermal uniformity;12-in silicon wafer |
公開日期: | 1-May-2001 |
摘要: | This paper presents a systematic method for estimating the dynamic incident-heat-flux profiles required to achieve thermal uniformity in 12-in silicon wafers during linearly ramped-temperature transient rapid thermal processing using the inverse heat-transfer method, A two-dimensional thermal model and temperature-dependent silicon wafer thermal properties are adopted in this study. The results show that thermal nonuniformities on the wafer surfaces occur during ramped increases in direct proportion to the ramp-up rate. The maximum temperature differences in the present study are 0.835 degreesC, 1.174 degreesC, and 1.516 degreesC, respectively, for linear 100 degreesC/s, 200 degreesC/s, and 300 degreesC/s ramp-up rates, Although a linear ramp-up rate of 300 degreesC/s was used and measurement errors did reach 3.864 degreesC, the surface temperature was maintained within 1.6 degreesC of the center of the wafer surface when the incident-heat-flux profiles were dynamically controlled according to the inverse-method approach. These thermal nonuniforimities could be acceptable in rapid thermal processing systems. |
URI: | http://dx.doi.org/10.1109/66.920725 http://hdl.handle.net/11536/29700 |
ISSN: | 0894-6507 |
DOI: | 10.1109/66.920725 |
期刊: | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING |
Volume: | 14 |
Issue: | 2 |
起始頁: | 143 |
結束頁: | 151 |
Appears in Collections: | Articles |
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